2N3904三极管参数资料
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2010-09-04
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Rev. A, February 2003
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* T
A
=25
o
C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current – Continuous 200 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
o
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
A
=25
o
C unless otherwise noted
Symbol Characteristic Max Units
2N3904 MMBT3904
P
D
Total Device Dissipation
Derate above 25
o
C
625
5.0
350
2.8
mW
mW/
o
C
R
èJC
Thermal Resistance, Junction to Case 83.3
o
C /W
R
èJA
Thermal Resistance, Junction to Ambient 200 375
o
C /W
2N3904
TO-92
E:Emitter B:Base C:Collector
MMBT3904
SOT-23
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ramboway2014-07-22好资料，下来看一看先
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